document number: 88597 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-apr-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 dual common cathode ultrafast rectifier fep30ap thru fep30jp vishay general semiconductor features ? glass passivated chip junction ? ultrafast recovery time ? low switching losses, high efficiency ? low thermal resistance ? high forward surge capability ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, inverters, fr eewheeling diodes, dc-to-dc converters, and other power switching application. mechanical data case: to-247ad (to-3p) epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 30 a v rrm 50 v to 600 v i fsm 300 a t rr 35 ns, 50 ns v f 0.95 v, 1.3 v, 1.5 v t j max. 150 c pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol fep 30ap fep 30bp fep 30cp fep 30dp fep 30fp fep 30gp fep 30hp fep 30jp unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v maximum rms voltage v rms 35 70 105 140 210 280 350 420 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v maximum average forward rectified current at t c = 100 c i f(av) 30 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 300 a operating storage and temperature range t j , t stg - 55 to + 150 c/w
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88597 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 08-apr-10 fep30ap thru fep30jp vishay general semiconductor note (1) thermal resistance from junction to case per diode mounted on heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetiti ve peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol fep 30ap fep 30bp fep 30cp fep 30dp fep 30fp fep 30gp fep 30hp fep 30jp unit maximum instantaneous forward voltage per diode 15.0 a v f 0.95 1.3 1.5 v maximum dc reverse current at rated dc blocking voltage per diode t c = 25 c i r 10 a t c = 100 c 500 maximum reverse recovery time per diode i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 35 50 ns typical junction capacitance per diode 4.0 v, 1 mhz c j 175 145 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol fep 30ap fep 30bp fep 30cp fep 30dp fep 30fp fep 30gp fep 30hp fep 30jp unit typical thermal resistance per diode r jc (1) 1.0 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-247ad fep30jp-e3/45 6.15 30 30/tube tube 0 50 100 150 0 6 12 24 30 36 average forward current (a) ca s e temperature (c) re s i s tive or inductive load 1 10 100 0 50 100 150 200 250 300 number of cycle s at 60 hz peak forwar d s urge current (a) t c = 100 c 8.3 m s s ingle half s ine-wave
document number: 88597 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-apr-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fep30ap thru fep30jp vishay general semiconductor fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse leakage characteristics per diode fig. 5 - typical juncti on capacitance per diode package outline dimensions in inches (millimeters) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) 1.8 1.6 1.4 1.2 pul s e width = 300 s 1 % duty cycle t j = 125 c t j = 25 c 50 v to 200 v 300 v to 400 v 500 v to 600 v percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 t j = 125 c t j = 100 c t j = 25 c 50 v to 200 v 300 v to 600 v 0.1 1 10 100 10 100 1000 rever s e voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 50 v to 400 v 500 v to 600 v pi n 1 pi n 3 case pi n 2 to-247ad (to-3p) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 (1.98) ref. 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. both sides 0.030 (0.76) 0.020 (0.51) 0.118 (3.0) 0.108 (2.7)
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